LM6511IMXSLASHNOPB

LM6511180ns3VComparator

1FEATURES 2•(TypicalUnlessOtherwiseNoted) •Operatesat+2.7V,+3V,+3.3V,+5V •LowPowerConsumption

LM6511IMXSLASHNOPB.B

LM6511180ns3VComparator

1FEATURES 2•(TypicalUnlessOtherwiseNoted) •Operatesat+2.7V,+3V,+3.3V,+5V •LowPowerConsumption

LS6511

PIRSENSORINTERFACE

DESCRIPTION(SeeFigure5) TheLS6511isaCMOSintegratedcircuit,designedfordetectingmotionfromaPIRSensorandinitiatingappropriateresponses. FEATURES: •DirectInterfacewithPIRSensor •Two-StageDifferentialAmplifier •AmplifierGainandBandwidthexternallycontrolled •Tru

LS6511N

DirectInterfacewithPIRSensor

DESCRIPTION(SeeFigure5) TheLS6511N,LS6512andLS6513areCMOSintegratedcircuitsdesignedfordetectingmotionfromaPIRSensorandinitiatingappropriateresponses. FEATURES: •DirectInterfacewithPIRSensor •Two-StageDifferentialAmplifier •AmplifierGainandBandwidthexternall

MAX6511

Low-Cost,RemoteSOTTemperatureSwitches

MAX6511UT___-T

Low-Cost,RemoteSOTTemperatureSwitches

NI6511

Low-CostIndustrialDigitalI/O-30V,BankIsolated

NIPCI-6511

Low-CostIndustrialDigitalI/O-30V,BankIsolated

NX6511GH

LASERDIODE1550nmInGaAsPMQW-DFBLASERDIODEFOR1.25Gb/sFTTHP2PANDOC-48IR-2

DESCRIPTION TheNX6511GHisa1550nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPIN-PD. FEATURES •OpticaloutputpowerPO=5.0mW •LowthresholdcurrentIth=10mA •Differentialefficiencyηd=0.35W/A •Wideoperatingtemperatu

NX6511GH

LASERDIODEINCOAXIALPACKAGEFOR155Mb/sAND622Mb/sAPPLICATIONS