丝印：LM5575Q0MH；Package：HTSSOP；LM5575-Q1 75-V, 1.5-A Step-down Switching Regulator

1 Features 1• AEC-Q100-qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C operating temperature – Device temperature grade 0: –40°C to +150°C operating temperature – Device HBM ESD classification level 2 • Integrated 75-V, 330-mΩ N-channel MOSFET • Ultra-w

文件：732.82 Kbytes 页数：35 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575/LM5575Q SIMPLE SWITCHER® 75V, 1.5A Step-Down Switching Regulator

1FEATURES 23• LM5575Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (−40°C to + 125°C Operating Junction Temperature) • Integrated 75V, 330mΩ N-channel MOSFET • Ultra-wide Input Voltage Range from 6V to 75V • Adjustable Output Voltage as Low as 1.225V • 1.5% Feedback

文件：654.92 Kbytes 页数：32 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575-Q1 75-V, 1.5-A Step-down Switching Regulator

1 Features 1• AEC-Q100-qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C operating temperature – Device temperature grade 0: –40°C to +150°C operating temperature – Device HBM ESD classification level 2 • Integrated 75-V, 330-mΩ N-channel MOSFET • Ultra-w

文件：732.82 Kbytes 页数：35 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575/LM5575Q SIMPLE SWITCHER® 75V, 1.5A Step-Down Switching Regulator

1FEATURES 23• LM5575Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (−40°C to + 125°C Operating Junction Temperature) • Integrated 75V, 330mΩ N-channel MOSFET • Ultra-wide Input Voltage Range from 6V to 75V • Adjustable Output Voltage as Low as 1.225V • 1.5% Feedback

文件：654.92 Kbytes 页数：32 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575-Q1 75-V, 1.5-A Step-down Switching Regulator

1 Features 1• AEC-Q100-qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C operating temperature – Device temperature grade 0: –40°C to +150°C operating temperature – Device HBM ESD classification level 2 • Integrated 75-V, 330-mΩ N-channel MOSFET • Ultra-w

文件：732.82 Kbytes 页数：35 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575-Q1 75-V, 1.5-A Step-down Switching Regulator

1 Features 1• AEC-Q100-qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C operating temperature – Device temperature grade 0: –40°C to +150°C operating temperature – Device HBM ESD classification level 2 • Integrated 75-V, 330-mΩ N-channel MOSFET • Ultra-w

文件：732.82 Kbytes 页数：35 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575/LM5575Q SIMPLE SWITCHER® 75V, 1.5A Step-Down Switching Regulator

1FEATURES 23• LM5575Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (−40°C to + 125°C Operating Junction Temperature) • Integrated 75V, 330mΩ N-channel MOSFET • Ultra-wide Input Voltage Range from 6V to 75V • Adjustable Output Voltage as Low as 1.225V • 1.5% Feedback

文件：654.92 Kbytes 页数：32 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575/LM5575Q SIMPLE SWITCHER® 75V, 1.5A Step-Down Switching Regulator

1FEATURES 23• LM5575Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (−40°C to + 125°C Operating Junction Temperature) • Integrated 75V, 330mΩ N-channel MOSFET • Ultra-wide Input Voltage Range from 6V to 75V • Adjustable Output Voltage as Low as 1.225V • 1.5% Feedback

文件：654.92 Kbytes 页数：32 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575-Q1 75-V, 1.5-A Step-down Switching Regulator

1 Features 1• AEC-Q100-qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C operating temperature – Device temperature grade 0: –40°C to +150°C operating temperature – Device HBM ESD classification level 2 • Integrated 75-V, 330-mΩ N-channel MOSFET • Ultra-w

文件：732.82 Kbytes 页数：35 Pages

TI

德州仪器

丝印：LM5575Q0MH；Package：HTSSOP；LM5575-Q1 75-V, 1.5-A Step-down Switching Regulator

1 Features 1• AEC-Q100-qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C operating temperature – Device temperature grade 0: –40°C to +150°C operating temperature – Device HBM ESD classification level 2 • Integrated 75-V, 330-mΩ N-channel MOSFET • Ultra-w

文件：732.82 Kbytes 页数：35 Pages

TI

德州仪器