LM5111-1MYSLASHNOPB中文资料德州仪器数据手册PDF规格书

1 Features

1• Independently Drives Two N-Channel MOSFETs

• Compound CMOS and Bipolar Outputs Reduce

Output Current Variation

• 5-A Sink and 3-A Source Current Capability

• Two Channels can be Connected in Parallel to

Double the Drive Current

• Independent Inputs (TTL Compatible)

• Fast Propagation Times (25 ns Typical)

• Fast Rise and Fall Times (14 ns and 12 ns Rise

and Fall, Respectively, With 2-nF Load)

• Available in Dual Noninverting, Dual Inverting and

Combination Configurations

• Supply Rail Undervoltage Lockout Protection

(UVLO)ƒ

• LM5111-4 UVLO Configured to Drive PFET

through OUT_A and NFET through OUT_B

• Pin Compatible With Industry Standard Gate

Drivers

2 Applications

• Synchronous Rectifier Gate Drivers

• Switch-mode Power Supply Gate Driver

• Solenoid and Motor Drivers

3 Description

The LM5111 Dual Gate Driver replaces industry

standard gate drivers with improved peak output

current and efficiency. Each compound output driver

stage includes MOS and bipolar transistors operating

in parallel that together sink more than 5-A peak from

capacitive loads. Combining the unique

characteristics of MOS and bipolar devices reduces

drive current variation with voltage and temperature.

Undervoltage lockout protection is also provided. The

drivers can be operated in parallel with inputs and

outputs connected to double the drive current

capability. This device is available in the SOIC

package or the thermally enhanced MSOPPowerPAD

package.