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LM5110-1MXSLASHNOPB.B中文资料德州仪器数据手册PDF规格书

LM5110-1MXSLASHNOPB.B
厂商型号

LM5110-1MXSLASHNOPB.B

功能描述

LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability

文件大小

773.56 Kbytes

页面数量

29

生产厂商 Texas Instruments
企业简称

TI2德州仪器

中文名称

美国德州仪器公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-7-4 18:30:00

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LM5110-1MXSLASHNOPB.B规格书详情

1 Features

1• Independently Drives Two N-Channel MOSFETs

• Compound CMOS and Bipolar Outputs Reduce

Output Current Variation

• 5A sink/3A Source Current Capability

• Two Channels can be Connected in Parallel to

Double the Drive Current

• Independent Inputs (TTL Compatible)

• Fast Propagation Times (25-ns Typical)

• Fast Rise and Fall Times (14-ns/12-ns Rise/Fall

With 2-nF Load)

• Dedicated Input Ground Pin (IN_REF) for Split

Supply or Single Supply Operation

• Outputs Swing from VCC to VEE Which Can Be

Negative Relative to Input Ground

• Available in Dual Noninverting, Dual Inverting and

Combination Configurations

• Shutdown Input Provides Low Power Mode

• Supply Rail Undervoltage Lockout Protection

• Pin-Out Compatible With Industry Standard Gate

Drivers

• Packages:

– SOIC-8

– WSON-10 (4 mm × 4 mm)

2 Applications

• Synchronous Rectifier Gate Drivers

• Switch-Mode Power Supply Gate Driver

• Solenoid and Motor Drivers

3 Description

The LM5110 Dual Gate Driver replaces industry

standard gate drivers with improved peak output

current and efficiency. Each “compound” output driver

stage includes MOS and bipolar transistors operating

in parallel that together sink more than 5A peak from

capacitive loads. Combining the unique

characteristics of MOS and bipolar devices reduces

drive current variation with voltage and temperature.

Separate input and output ground pins provide

Negative Drive Capability allowing the user to drive

MOSFET gates with positive and negative VGS

voltages. The gate driver control inputs are

referenced to a dedicated input ground (IN_REF).

The gate driver outputs swing from VCC to the output

ground VEE which can be negative with respect to

IN_REF. Undervoltage lockout protection and a

shutdown input pin are also provided. The drivers can

be operated in parallel with inputs and outputs

connected to double the drive current capability. This

device is available in the SOIC-8 and the thermallyenhanced

WSON-10 packages.

供应商 型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
2024+
WSON-10(4x4)
500000
诚信服务,绝对原装原盘
询价
TI(德州仪器)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
2017+
28562
只做原装正品假一赔十!
询价
ns
23+
10-LLP
9823
询价
nsc
24+
NA
6980
原装现货,可开13%税票
询价
NS
22+
DFN10
3000
原装正品,支持实单
询价
NSC
23+
10-LLP
65600
询价
TI
25+
WSON (DPR)
6000
原厂原装,价格优势
询价
NS
2402+
LLP-10
8324
原装正品!实单价优!
询价
TI
24+
LLP-10
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价