LM5110-1MSLASHNOPB中文资料德州仪器数据手册PDF规格书

1 Features

1• Independently Drives Two N-Channel MOSFETs

• Compound CMOS and Bipolar Outputs Reduce

Output Current Variation

• 5A sink/3A Source Current Capability

• Two Channels can be Connected in Parallel to

Double the Drive Current

• Independent Inputs (TTL Compatible)

• Fast Propagation Times (25-ns Typical)

• Fast Rise and Fall Times (14-ns/12-ns Rise/Fall

With 2-nF Load)

• Dedicated Input Ground Pin (IN_REF) for Split

Supply or Single Supply Operation

• Outputs Swing from VCC to VEE Which Can Be

Negative Relative to Input Ground

• Available in Dual Noninverting, Dual Inverting and

Combination Configurations

• Shutdown Input Provides Low Power Mode

• Supply Rail Undervoltage Lockout Protection

• Pin-Out Compatible With Industry Standard Gate

Drivers

• Packages:

– SOIC-8

– WSON-10 (4 mm × 4 mm)

2 Applications

• Synchronous Rectifier Gate Drivers

• Switch-Mode Power Supply Gate Driver

• Solenoid and Motor Drivers

3 Description

The LM5110 Dual Gate Driver replaces industry

standard gate drivers with improved peak output

current and efficiency. Each “compound” output driver

stage includes MOS and bipolar transistors operating

in parallel that together sink more than 5A peak from

capacitive loads. Combining the unique

characteristics of MOS and bipolar devices reduces

drive current variation with voltage and temperature.

Separate input and output ground pins provide

Negative Drive Capability allowing the user to drive

MOSFET gates with positive and negative VGS

voltages. The gate driver control inputs are

referenced to a dedicated input ground (IN_REF).

The gate driver outputs swing from VCC to the output

ground VEE which can be negative with respect to

IN_REF. Undervoltage lockout protection and a

shutdown input pin are also provided. The drivers can

be operated in parallel with inputs and outputs

connected to double the drive current capability. This

device is available in the SOIC-8 and the thermallyenhanced

WSON-10 packages.