LM5109MAXSLASHNOPB中文资料德州仪器数据手册PDF规格书

1FEATURES

2• Drives Both a High Side and Low Side N-

Channel MOSFET

• 1A Peak Output Current (1.0A Sink / 1.0A

Source)

• Independent TTL Compatible Inputs

• Bootstrap Supply Voltage to 118V DC

• Fast Propagation Times (27 ns Typical)

• Drives 1000 pF Load with 15ns Rise and Fall

Times

• Excellent Propagation Delay Matching (2 ns

Typical)

• Supply Rail Under-voltage Lockout

• Low Power Consumption

• Pin Compatible with ISL6700

TYPICAL APPLICATIONS

• Current Fed Push-pull Converters

• Half and Full Bridge Power Converters

• Solid State Motor Drives

• Two Switch Forward Power Converters

PACKAGE

• SOIC-8

• WSON-8 (4 mm x 4 mm)

DESCRIPTION

The LM5109 is a low cost high voltage gate driver,

designed to drive both the high side and the low side

N-Channel MOSFETs in a synchronous buck or a

half bridge configuration. The floating high-side driver

is capable of working with rail voltages up to 100V.

The outputs are independently controlled with TTL

compatible input thresholds. A robust level shifter

technology operates at high speed while consuming low power and providing clean level transitions from

the control input logic to the high side gate driver.

Under-voltage lockout is provided on both the low

side and the high side power rails. The device is

available in the SOIC-8 and the thermally enhanced

WSON-8 packages.