LM5109ASDSLASHNOPB.B中文资料德州仪器数据手册PDF规格书

1 Features

1• Drives Both a High-Side and Low-Side N-Channel

MOSFET

• 1A peak Output Current (1.0A Sink / 1.0A Source)

• Independent TTL Compatible Inputs

• Bootstrap Supply Voltage to 108V DC

• Fast Propagation Times (30 ns Typical)

• Drives 1000 pF Load with 15ns Rise and Fall

Times

• Excellent Propagation Delay Matching (2 ns

Typical)

• Supply Rail Under-Voltage Lockout

• Low Power Consumption

• Pin Compatible with ISL6700

• Industry Standard SOIC-8 and Thermally

Enhanced WSON-8 Package

2 Applications

• Current Fed Push-Pull Converters

• Half and Full Bridge Power Converters

• Solid State Motor Drives

• Two Switch Forward Power Converters

3 Description

The LM5109A is a cost effective, high voltage gate

driver designed to drive both the high-side and the

low-side N-Channel MOSFETs in a synchronous

buck or a half bridge configuration. The floating highside

driver is capable of working with rail voltages up

to 90V. The outputs are independently controlled with

TTL compatible input thresholds. The robust level

shift technology operates at high speed while

consuming low power and providing clean level

transitions from the control input logic to the high-side

gate driver. Under-voltage lockout is provided on both

the low-side and the high-side power rails. The

device is available in the SOIC and the thermally

enhanced WSON packages.