LM5106SDSLASHNOPB中文资料德州仪器数据手册PDF规格书

1 Features

1• Drives Both a High-Side and Low-Side N-Channel

MOSFET

• 1.8-A Peak Output Sink Current

• 1.2-A Peak Output Source Current

• Bootstrap Supply Voltage Range up to 118-V DC

• Single TTL Compatible Input

• Programmable Turnon Delays (Dead-Time)

• Enable Input Pin

• Fast Turnoff Propagation Delays (32 ns Typical)

• Drives 1000 pF With 15-ns Rise and 10-ns Fall

Time

• Supply Rail Undervoltage Lockout

• Low Power Consumption

• 10-Pin WSON Package (4 mm × 4 mm) and 10-

Pin VSSOP Package

2 Applications

• Solid-State Motor Drives

• Half-Bridge and Full-Bridge Power Converters

• Two Switch Forward Power Converters

3 Description

The LM5106 is a high-voltage gate driver designed to

drive both the high-side and low-side N-channel

MOSFETs in a synchronous buck or half-bridge

configuration. The floating high-side driver can work

with rail voltages up to 100 V. The single control input

is compatible with TTL signal levels and a single

external resistor programs the switching transition dead-time through tightly matched turnon delay

circuits. The robust level shift technology operates at

high speed while consuming low power and provides

clean output transitions. Undervoltage lockout (UVLO) disables the gate driver when either the low

side or the bootstrapped high-side supply voltage is

below the operating threshold. The LM5106 is offered

in the 10-pin VSSOP or the thermally enhanced 10-

pin WSON plastic package.