LM5105SDXSLASHNOPB中文资料德州仪器数据手册PDF规格书

1 Features

1• Drives Both a High-Side and Low-Side N-Channel

MOSFET

• 1.8-A Peak Gate Drive Current

• Bootstrap Supply Voltage Range up to 118-V DC

• Integrated Bootstrap Diode

• Single TTL Compatible Input

• Programmable Turnon Delays (Dead Time)

• Enable Input Pin

• Fast Turnoff Propagation Delays (26 ns Typical)

• Drives 1000 pF With 15-ns Rise and Fall Time

• Supply Rail Undervoltage Lockout

• Low Power Consumption

• Package: Thermally Enhanced 10-Pin WSON

(4 mm × 4 mm)

2 Applications

• Solid-State Motor Drives

• Half- and Full-Bridge Power Converters

3 Description

The LM5105 is a high-voltage gate driver designed to

drive both the high-side and low-side N–Channel

MOSFETs in a synchronous buck or half-bridge

configuration. The floating high-side driver is capable

of working with rail voltages up to 100 V. The single

control input is compatible with TTL signal levels and

a single external resistor programs the switching

transition dead time through tightly matched turnon

delay circuits. A high-voltage diode is provided to

charge the high-side gate-drive bootstrap capacitor.

The robust level shift technology operates at high

speed while consuming low power and provides clean

output transitions. Undervoltage lockout disables the

gate driver when either the low-side or the

bootstrapped high-side supply voltage is below the

operating threshold. The LM5105 is offered in the

thermally enhanced WSON plastic package.