LM5102SDSLASHNOPB中文资料德州仪器数据手册PDF规格书

1 Features

1• Drives Both a High-Side and Low-Side N-Channel

MOSFET

• Independently Programmable High and Low Side

Rising Edge Delay

• Bootstrap Supply Voltage Range up to 118 V dc

• Fast Turn-Off Propagation Delay (25 ns Typical)

• Drives 1000-pF Loads with 15-ns Rise and Fall

Times

• Supply Rail Undervoltage Lockout

• Low Power Consumption

• Timer Can Be Terminated Midway Through

Sequence

2 Applications

• Current Fed Push-Pull Power Converters

• Half and Full Bridge Power Converters

• Synchronous Buck Converters

• Two Switch Forward Power Converters

• Forward with Active Clamp Converters

3 Description

The LM5102 high-voltage gate driver is designed to

drive both the high side and the low side N-Channel

MOSFETs in a synchronous buck or a half bridge

configuration. The floating high-side driver is capable

of working with supply voltages up to 100 V. The

outputs are independently controlled. The rising edge

of each output can be independently delayed with a

programming resistor. An integrated high voltage

diode is provided to charge the high side gate drive

bootstrap capacitor. A robust level shifter operates at

high speed while consuming low power and providing

clean level transitions from control logic to the high

side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This

device is available in the standard VSSOP 10 pin and

the WSON 10 pin packages.