LM4860MXSLASHNOPB

Marking：LM4860M；Package：SOIC；LM4860 Series 1W Audio Power Amplifier with Shutdown Mode

1FEATURES 2•NoOutputCouplingCapacitors,Bootstrap Capacitors,orSnubberCircuitsareNecessary •SmallOutline(SO)Packaging •CompatiblewithPCPowerSupplies •ThermalShutdownProtectionCircuitry •Unity-GainStable •ExternalGainConfigurationCapability •TwoHeadphoneContro

LM4860MXSLASHNOPB

Series 1W Audio Power Amplifier with Shutdown Mode

LM4860MXSLASHNOPB.A

Marking：LM4860M；Package：SOIC；LM4860 Series 1W Audio Power Amplifier with Shutdown Mode

1FEATURES 2•NoOutputCouplingCapacitors,Bootstrap Capacitors,orSnubberCircuitsareNecessary •SmallOutline(SO)Packaging •CompatiblewithPCPowerSupplies •ThermalShutdownProtectionCircuitry •Unity-GainStable •ExternalGainConfigurationCapability •TwoHeadphoneContro

M4860

Snap-InCordgripStrainReliefs–Straight-ThruandPigtail™

N4860A

DigRFv3AcquisitionProbe

N4850ADigRFv3AcquisitionProbe N4860ADigRFv3StimulusProbe EvaluateandintegrateyourDigRFv3componentsmoreeasily DigRFv3Challenges TheDigRFv3standardpresentsnewchallengesformobilewirelessdevelopment,integrationandvalidationteamsasthecommunicationslinkbetweenth

NTD4860

25VN-ChannelMOSFET

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •OptimizedGateChargetoMinimizeSwitchingLosses Applications •VCOREApplications •DC−DCConverters •High/LowSideSwitching VDS(V)=25V ID=65A(VGS=10V) RDS(ON)

NTD4860N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTD4860N

25V,65A,SingleN-Channel,DPAK/IPAK

NTD4860N

25V,65A,SingleN?묬hannel,DPAK/IPAK

P4860VU

N-ChannelEnhancementModeFieldEffectTransistor