MBR360

SchottkyRectifier,3A

MBR360

SCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications

MBR360

3.0A60VSchottkydiode

MBR360

3.0A60VSchottkydiode

MBR360

3ASCHOTTKYRECTIFIER

3ASCHOTTKYRECTIFIER AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

MBR360

SchottkyBarrierRectifierDiodes

MBR360

SCHOTTKYBARRIERRECTIFIER

DESCRIPTION TheUTCMBR360isa3.0Aschottkybarrierrectifier,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowforwardvoltagedropandhighefficiency,etc. TheUTCMBR360issuitableforfreewheelingdiodes,highfrequencyinverters,lowvoltageandpolarityprotectiondiode

MBR360

SCHOTTKYBARRIERDIODE

MBR360

3.0ASCHOTTKYBARRIERDIODE

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

MBR360

AxialLeadRectifiers

ThesedevicesemploytheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlap contact.Ideallysuitedforuseasrectifiersinlow−voltage, high−frequencyinverters,freewhee