LM3447MTXSLASHNOPB.A说明书PDF资料行情报价第3页-114ic电子网

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SI3447BDV	文件：65.239 Kbytes Page：5 Pages	P-Channel12-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET:1.8-VRated •UltraLowOn-Resistance APPLICATIONS •LoadSwitch •PASwitch	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SI3447CDV	文件：139.21 Kbytes Page：7 Pages	P-Channel12-V(D-S)MOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SI3447DV	文件：90.72 Kbytes Page：5 Pages	P-Channel1.8VSpecifiedPowerTrenchMOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’slowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–5.5A,–20V.RDS(ON)=33mΩ@VGS=–4.5V RDS(ON)=43mΩ@VGS=–2.5V	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
SI3447DV	文件：246.26 Kbytes Page：3 Pages	P-Channel1.8V(G-S)MOSFET DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthep-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe−55to125°Ctemperaturerangesunderthepulsed0-Vto5-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

更多LM3447MTXSLASHNOPB.A供应商更新时间2025-7-24 11:00:00