OPERATIONAL AMPLIFIERS/BUFFERS

文件：451.19 Kbytes 页数：3 Pages

TI

德州仪器

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

文件：24.4 Kbytes 页数：3 Pages

NTE

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

文件：72.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

文件：72.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体