丝印：L2771；Package：WSON；LM2771 Low-Ripple 250mA Switched Capacitor Step-Down DC/DC Converter

1FEATURES 2• Low-Noise Fixed Frequency Operation • 1.5V Output Voltage • Li-Ion (3.6V) to 1.5V with 81% Efficiency • 1.7% Output Voltage Accuracy • Very Low Output Ripple: 8mV @ 250mA • Output Currents up to 250mA • 2.7V to 5.5V Input Range • Shutdown Disconnects Load from VIN • 1

文件：943.87 Kbytes 页数：16 Pages

TI

德州仪器

Low-Ripple 250mA Switched Capacitor Step-Down DC/DC Converter

文件：1.38978 Mbytes 页数：16 Pages

TI

德州仪器

丝印：L2771；Package：WSON；LM2771 Low-Ripple 250mA Switched Capacitor Step-Down DC/DC Converter

1FEATURES 2• Low-Noise Fixed Frequency Operation • 1.5V Output Voltage • Li-Ion (3.6V) to 1.5V with 81% Efficiency • 1.7% Output Voltage Accuracy • Very Low Output Ripple: 8mV @ 250mA • Output Currents up to 250mA • 2.7V to 5.5V Input Range • Shutdown Disconnects Load from VIN • 1

文件：943.87 Kbytes 页数：16 Pages

TI

德州仪器

3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

文件：404.53 Kbytes 页数：16 Pages

NEC

瑞萨

3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

文件：404.53 Kbytes 页数：16 Pages

NEC

瑞萨

3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system. These IC is manufactured using NEC’s 20 GHz fT N

文件：171.89 Kbytes 页数：28 Pages

NEC

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