PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM346 consists of four independent, high gain, internally compensated, low power programmable amplifiers. Two external resistors (Rset) allow the user to program the gain-bandwith product, slew rate, supply current, input bias current, input offset current and input noise. For exa

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STMICROELECTRONICS

意法半导体

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

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NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

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POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.63 Kbytes 页数：5 Pages

POINN