LLDB3

150mW Bi-directional Trigger Diode

FEATURES -Surfacemounteddevice -Hermeticallysealedglass -MatteTin(Sn)terminalfinish -Allexternalsurfacesarecorrosionresistantandterminalsarereadilysolderable

LLDB3

SILICON BIDIRECTIONAL DIAC

FEATURES •Thethree-layer,two-terminal,axial-lead,hermeticallysealeddiacsaredesignedspecificallyfortriggeringthyristors.Theydemonstratelowbreakovercurrentatbreakovervoltageastheywithstandpeakpulsecurrent.Thebreakoversymmetryiswithinthreevolts(DB3,DC34,DB4)orfou

LLDB3

SILICON BIDIRECTIONAL DIACS

Theglasspassivated,three-layer,twoterminal,axiallead, hermeticallysealeddiacsaredesignedspecificallyfortriggeringthyristors.Theydemonstratelowbreakovercurrenatbreakovervoltageastheywithstandpeakpulsecurrent.Thebreakoversymmetryiswithinfourvoltswithatypicalb

LLDB3

SILICON BIDIRECTIONAL DIAC

Features •BreakoverVoltage:32V •BreakoverVoltageRange:28Vto36V •LeadFreeFinish/RoHSCompliant(Note3)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

LLDB3

LL-34 Hermetically Sealed Glass BI-directional Trigger Diode

SpecificationFeatures: ■VBO=32V ■LL-34(Mini-MELF)Package ■SurfaceDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■AllExternalSurfacesAreCorrosionResistantAndTerminalsAreReadilySolderable ■RoHSCompliant ■MatteTin(Sn)TerminalFinis

LLDB3

SILICON BIDIRECTIONAL DIACS

FEATURES Thethreelayer,twotermnal,axiallead,hermeticallysealeddiacsaredesignedspecificallyfortriggeringthyristors.Theydemonstratelowbreakovercurrentatbreakovervoltageastheywithstandpeakpulsecurrent,Thebreakoversymmetryiswithinthreevolts(LLDB3,LLDB4).Thesediacs

LLDB3

SILICON BIDIRECTIONAL DIAC

FEATURES •Thethree-layer,two-terminal,axial-lead,hermeticallysealeddiacsaredesignedspecificallyfortriggeringthyristors.Theydemonstratelowbreakovercurrentatbreakovervoltageastheywithstandpeakpulsecurrent.Thebreakoversymmetryiswithinthreevolts(DB3,DC34,DB4)orfou

LLDB3

SILICON BIDIRECTIONAL DIAC

FEATURES •Thethree-layer,two-terminal,axial-lead,hermeticallysealeddiacsaredesignedspecificallyfortriggeringthyristors.Theydemonstratelowbreakovercurrentatbreakovervoltageastheywithstandpeakpulsecurrent.Thebreakoversymmetryiswithinthreevolts(DB3,DC34,DB4)orfour

LLDB3

SILICON BIDIRECTIONAL DIAC

FEATURES •Thethree-layer,two-terminal,axial-lead,hermeticallysealeddiacsaredesignedspecificallyfortriggeringthyristors.Theydemonstratelowbreakovercurrentatbreakovervoltageastheywithstandpeakpulsecurrent.Thebreakoversymmetryiswithinthreevolts(DB3,DC34,DB4)orfour

LLDB3

BIDIRECTIONAL TRIGGER DIODE

Features ●VBO:32V ●Breakovervoltagerange:28to36V Applications Functioningasatriggerdiodewithafixedvoltagereference,theDB3canbeusedinconjunctionwithtriacsforsimplifiedgatecontrolcircuitsorasastartingelementinfluorescentlampballasts.