LL1608-FS1N8S中文资料恩XP数据手册PDF规格书

Heterojunction Bipolar Transistor Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD-SCDMA, PCS, UMTS and LTE. The amplifier is housed in a cost-effective, surface mount QFN plastic package.

特性 Features

• Frequency: 1800-2200 MHz

• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)

• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)

• OIP3: 44.5 dBm @ 2140 MHz (W-CDMA Application Circuit)

• Active Bias Control (adjustable externally)

• Single 5 V Supply

• Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package

• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.