CMOS 1M (128K x 8) MROM

DESCRIPTION The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 55

文件：51.28 Kbytes 页数：6 Pages

SHARPSharp Corporation

夏普

CMOS 1M (128K x 8) 3 V-Drive MROM

DESCRIPTION The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 131,072 words × 8 bit organization • Access time: 500 ns (MAX.) • Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µ

文件：39.72 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普

CMOS 1M (128K x 8) MROM

Sharp

夏普

CMOS 1M (128K x 8) 3 V-Drive MROM

Sharp

夏普