LH52D1000中文资料夏普数据手册PDF规格书

DESCRIPTION

The LH52D1000 is a static RAM organized as 131,072 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.

FEATURES

• Access time: 85 ns (MAX.), 100 ns (MAX.)

• Current consumption:

Operating: 40 mA (MAX.)

6 mA (MAX.) (tRC, tWC = 1 µs)

Standby: 45 µA (MAX.)

• Data Retention:

1.0 µA (MAX. VCCDR = 3 V, tA = 25°C)

• Single power supply: 2.7 V to 3.6 V

• Operating temperature: -40°C to +85°C

• Fully-static operation

• Three-state output

• Not designed or rated as radiation hardened

• Packages:

32-pin 8 × 20 mm2 TSOP

32-pin 8 × 13.4 mm2 STSOP

• N-type bulk silicon