LOW GAIN WIDE BAND RF AMPLIFIER

文件：259.87 Kbytes 页数：10 Pages

NSC

国半

LOW GAIN WIDE BAND RF AMPLIFIER

文件：259.87 Kbytes 页数：10 Pages

NSC

国半

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

文件：152.14 Kbytes 页数：9 Pages

TRIQUINT

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

文件：152.14 Kbytes 页数：9 Pages

TRIQUINT

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

文件：180.78 Kbytes 页数：13 Pages

PANASONIC

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