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LH28F800BJHE-PBTL90中文资料PDF规格书

LH28F800BJHE-PBTL90
厂商型号

LH28F800BJHE-PBTL90

功能描述

8M (x8/x16) Flash Memory

文件大小

682.53 Kbytes

页面数量

47

生产厂商 Sharp Microelectronics of the Americas (SMA)
企业简称

SHARP夏普微

中文名称

美国夏普微电子公司(SMA)官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-31 19:00:00

LH28F800BJHE-PBTL90规格书详情

8M-BIT ( 512Kbit ×16 / 1Mbit ×8 ) Boot Block Flash MEMORY

The product is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.

The product can operate at VCC=2.7V-3.6V and VCCW=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation capability realize battery life and suits for cellular phone application.

Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications.

■ Low Voltage Operation

― VCC=VCCW=2.7V-3.6V Single Voltage

■ OTP(One Time Program) Block

― 3963 word + 4 word Program only array

■ User-Configurable ×8 or ×16 Operation

■ High-Performance Read Access Time

― 90ns(VCC=2.7V-3.6V)

■ Operating Temperature

― -40°C to +85°C

■ Low Power Management

― Typ. 2µA (VCC=3.0V) Standby Current

― Automatic Power Savings Mode Decreases ICCR in Static Mode

― Typ. 120µA (VCC=3.0V, TA=+25°C, f=32kHz) Read Current

■ Optimized Array Blocking Architecture

― Two 4K-word (8K-byte) Boot Blocks

― Six 4K-word (8K-byte) Parameter Blocks

― Fifteen 32K-word (64K-byte) Main Blocks

― Bottom Boot Location

■ Extended Cycling Capability

― Minimum 100,000 Block Erase Cycles

■ Enhanced Automated Suspend Options

― Word/Byte Write Suspend to Read

― Block Erase Suspend to Word/Byte Write

― Block Erase Suspend to Read

■ Enhanced Data Protection Features

― Absolute Protection with VCCW≤VCCWLK

― Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions

― Block Locking with Command and WP#

― Permanent Locking

■ Automated Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration

― Command User Interface (CUI)

― Status Register (SR)

■ SRAM-Compatible Write Interface

■ Industry-Standard Packaging

― 48-Lead TSOP

■ ETOXTM* Nonvolatile Flash Technology

■ CMOS Process (P-type silicon substrate)

■ Not designed or rated as radiation hardened

产品属性

  • 型号:

    LH28F800BJHE-PBTL90

  • 制造商:

    SHARP

  • 制造商全称:

    Sharp Electrionic Components

  • 功能描述:

    8M(x8/x16) Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
SHARP
23+
TSOP
20000
原厂原装正品现货
询价
SHARP/Sharp Microelectronics o
21+
10
优势代理渠道,原装正品,可全系列订货开增值税票
询价
SHARP
20+
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SHARP
22+
TSOP48
2568
原装优势!绝对公司现货
询价
SHARP
2021+
TSOP48
6020
百分百原装正品
询价
SHAPP
21+
TSOP48
6688
十年老店,原装正品
询价
SHARP
22+
TSOP
3000
原装正品,支持实单
询价
SHARP
589220
16余年资质 绝对原盒原盘 更多数量
询价
SHARP/夏普
2022
TSOP-48
80000
原装现货,OEM渠道,欢迎咨询
询价
SHARP
2015+
TSOP48
19889
一级代理原装现货,特价热卖!
询价