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8M-BIT ( 512Kbit ×16 / 1Mbit ×8 ) Boot Block Flash MEMORY
The product is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.
The product can operate at VCC=2.7V-3.6V and VCCW=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications.
■ Low Voltage Operation
― VCC=VCCW=2.7V-3.6V Single Voltage
■ OTP(One Time Program) Block
― 3963 word + 4 word Program only array
■ User-Configurable ×8 or ×16 Operation
■ High-Performance Read Access Time
― 90ns(VCC=2.7V-3.6V)
■ Operating Temperature
― -40°C to +85°C
■ Low Power Management
― Typ. 2µA (VCC=3.0V) Standby Current
― Automatic Power Savings Mode Decreases ICCR in Static Mode
― Typ. 120µA (VCC=3.0V, TA=+25°C, f=32kHz) Read Current
■ Optimized Array Blocking Architecture
― Two 4K-word (8K-byte) Boot Blocks
― Six 4K-word (8K-byte) Parameter Blocks
― Fifteen 32K-word (64K-byte) Main Blocks
― Bottom Boot Location
■ Extended Cycling Capability
― Minimum 100,000 Block Erase Cycles
■ Enhanced Automated Suspend Options
― Word/Byte Write Suspend to Read
― Block Erase Suspend to Word/Byte Write
― Block Erase Suspend to Read
■ Enhanced Data Protection Features
― Absolute Protection with VCCW≤VCCWLK
― Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions
― Block Locking with Command and WP#
― Permanent Locking
■ Automated Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration
― Command User Interface (CUI)
― Status Register (SR)
■ SRAM-Compatible Write Interface
■ Industry-Standard Packaging
― 48-Lead TSOP
■ ETOXTM* Nonvolatile Flash Technology
■ CMOS Process (P-type silicon substrate)
■ Not designed or rated as radiation hardened
产品属性
- 型号:
LH28F800BJHE-PBTL90
- 制造商:
SHARP
- 制造商全称:
Sharp Electrionic Components
- 功能描述:
8M(x8/x16) Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SHARP |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
询价 | ||
SHARP/Sharp Microelectronics o |
21+ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | |||
SHARP |
20+ |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
SHARP |
22+ |
TSOP48 |
2568 |
原装优势!绝对公司现货 |
询价 | ||
SHARP |
2021+ |
TSOP48 |
6020 |
百分百原装正品 |
询价 | ||
SHAPP |
21+ |
TSOP48 |
6688 |
十年老店,原装正品 |
询价 | ||
SHARP |
22+ |
TSOP |
3000 |
原装正品,支持实单 |
询价 | ||
SHARP |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
SHARP/夏普 |
2022 |
TSOP-48 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
SHARP |
2015+ |
TSOP48 |
19889 |
一级代理原装现货,特价热卖! |
询价 |