High density cell design for ultra low Rdson

文件：947.72 Kbytes 页数：5 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode MOSFET 50A 100V

LXMICRO

广东凌讯微电子

N-Channel Enhancement Mode MOSFET 50A 100V

LXMICRO

广东凌讯微电子

N-Channel Enhancement Mode MOSFET

文件：1.66821 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件：48.38 Kbytes 页数：2 Pages

MICROSEMI

美高森美

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件：48.38 Kbytes 页数：2 Pages

MICROSEMI

美高森美