丝印：LG4D08120E；Package：TO-252-2；Silicon Carbide Schottky Diode

文件：3.06946 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

LGE

鲁光电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.04227 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.04227 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.04227 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子