LF356-MIL中文资料军用级、单通道、30V、5MHz、FET 输入运算放大器数据手册TI规格书

描述 Description

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

特性 Features

• Advantages
• Replace Expensive Hybrid and Module FET Op Amps
• Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
• Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
• Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
• New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
• Internal Compensation and Large Differential Input Voltage Capability

• Common Features
• Low Input Bias Current: 30 pA
• Low Input Offset Current: 3 pA
• High Input Impedance: 1012 Ω
• Low Input Noise Current: 0.01 pA/√Hz
• High Common-Mode Rejection Ratio: 100 dB
• Large DC Voltage Gain: 106 dB

• Uncommon Features
• Extremely Fast Settling Time to 0.01%: 1.5 µs
• Fast Slew Rate: 12 V/µs
• Wide Gain Bandwidth: 5 MHz
• Low Input Noise Voltage: 12 nV/√Hz