RF Power MOSFET Transistor 10W, 500-1000MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • Common source configuration • Lower noise floor • Applications Broadband linear operation 500 MHz to 1200 MHz

文件：142.03 Kbytes 页数：3 Pages

MA-COM

RF MOSFET Power Transistor, IOW, 28V 500 - 1000 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • Common Source Configuration • Lower Noise Floor • Applications Broadband Linear Operation 500‘tiHz to 1200 MHz

文件：207.87 Kbytes 页数：3 Pages

MACOM

500-1000 MHz, RF MOSFET power transistor, 10W, 28V

MACOM

Shape & Dimensions / Recommended Solder Land Pattern

文件：106.23 Kbytes 页数：1 Pages

ABCO

7.5kVRMS SPI/Digital or I2C 關Module Isolator with Transformer Driver

DESCRIPTION The LTM®2810 is a complete galvanic digital μModule® (micromodule) isolator. No external components are required. Individual 3V to 5.5V supplies power each side of the digital isolator. Separate logic supply pins allow easy interfacing with different logic levels from 1.62V to 5.

文件：1.3482 Mbytes 页数：30 Pages

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亚德诺

7.5kVRMS SPI/Digital or I2C 關Module Isolator with Transformer Driver

DESCRIPTION The LTM®2810 is a complete galvanic digital μModule® (micromodule) isolator. No external components are required. Individual 3V to 5.5V supplies power each side of the digital isolator. Separate logic supply pins allow easy interfacing with different logic levels from 1.62V to 5.

文件：1.3482 Mbytes 页数：30 Pages

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亚德诺