RF Power MOSFET Transistor 2W, 500-1000MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • Common source configuration • Lower noise floor • Applications Broadband linear operation 500 MHz to 1400 MHz • RoHS Compliant

文件：140.48 Kbytes 页数：3 Pages

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RF MOSFETPower Transistor,2W,28V 500-1000MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • Common Source Configuration • Lower Noise Floor • Applications Broadband Linear Operation 500 MHz to 1400 MHz

文件：212.5 Kbytes 页数：3 Pages

MACOM

RF Power MOSFET Transistor

文件：140.48 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：612.79 Kbytes 页数：4 Pages

MA-COM

500-1000 MHz, RF MOSFET power transistor, 2W, 28V

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