Wide bandwidth single JFET operational amplifiers

Description These circuits are high speed JFET input single operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature

文件：622.28 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Ultra Bright GaAIAs Lamps

文件：29.92 Kbytes 页数：1 Pages

PANASONIC

松下

Ultra Bright GaAIAs Lamps

文件：29.92 Kbytes 页数：1 Pages

PANASONIC

松下

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

文件：26.18 Kbytes 页数：3 Pages

NTE