Quad SPST JFET Analog Switches

General Description These devices are a monolithic combination of bipolar and JFET technology producing the industry’s first one chip quad JFET switch. A unique circuit technique is employed to main tain a constant resistance over the analog voltage range of ±10V. The input is designed to opera

文件：416.3 Kbytes 页数：18 Pages

NSC

国半

Quad SPST JFET Analog Switches

General Description These devices are a monolithic combination of bipolar and JFET technology producing the industry’s first one chip quad JFET switch. A unique circuit technique is employed to main tain a constant resistance over the analog voltage range of ±10V. The input is designed to opera

文件：416.3 Kbytes 页数：18 Pages

NSC

国半

INFRARED EMITTING DIODES

文件：141.27 Kbytes 页数：8 Pages

LIGITEK

立碁电子

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode appl

文件：278.04 Kbytes 页数：2 Pages

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated SWITCHMODE applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • D

文件：278.67 Kbytes 页数：8 Pages

ONSEMI

安森美半导体