LET16060C中文资料60W 28V 1.6GHz LDMOS TRANSISTOR数据手册ST规格书

描述 Description

The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications.

特性 Features

Excellent thermal stability
Common source configuration
P
OUT(@ 28 V)= 60 W with 13.8 dB gain @ 1600 MHz
BeO free package
In compliance with the 2002/95/EC European directive

简介

LET16060C属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的LET16060C晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。