LEO1N5811数据手册ST中文资料规格书

描述 Description

The 6 A, 150 V ultratfast rectifier LEO1N5811 is a rad-hard rectifier housed in the tiny surface-mount SOD128Flat package, operating with a junction temperature from -40 °C to +175 °C.

The LEO1N5811 meets the challenges of the LEO satellites for performance and reliability in a strict budget thanks to the STMicroelectronics LEO generic specification dedicated to space ready rad-hard plastic power discretes; this AEC-Q101-based specification offers a trade-off among foot-print size savings and cost of ownership together with radiation hardness and large production capacity.

The LEO1N5811 rectifier is suitable for switching mode power supplies and high frequency DC-to-DC converters such as low voltage high frequency inverter, OR-ring, free-wheeling, blocking diode or reverse polarity protection. It is well suited for critical mission equipment such as avionics and Hi-Rel industrial.

特性 Features

• Max. reverse voltage = 150 V
• Average on state current = 6 A
• Max. junction temperature = 175 °C
• DC thermal resistance RTH(JL) = 10 °C/W
• ESCC qualified diode die
• SOD128Flat surface mount package
• Reliability qualification based on AEC-Q101
• Tiny package : 2.5 x 4.8 = 12 mm²
• Low leakage current: 2 µA at VRWM at 25°C
• Fast switching and low on-state voltage
• Radiation tested performances:
•TID 300 krad(Si) at high dose rate
•TNID 3.1011 particles/cm²
•SEB free at full VRWM up to 60 MeV.cm²/mg