Improved light management system

文件：125.56 Kbytes 页数：3 Pages

OSRAM

艾迈斯欧司朗

Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025-1150MHz

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Hermeticall

文件：188.78 Kbytes 页数：6 Pages

MA-COM

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz • Omnigold™ Metalization System

文件：18.73 Kbytes 页数：1 Pages

ASI

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

文件：147.24 Kbytes 页数：4 Pages

MACOM