1MEG (131072 words x 8 bits) Flash Memory

Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word ×8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provi

文件：281.06 Kbytes 页数：14 Pages

SANYO

三洋

1MEG (131072 words x 8 bits) Flash Memory

Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word ×8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provi

文件：281.06 Kbytes 页数：14 Pages

SANYO

三洋

1MEG (131072 words x 8 bits) Flash Memory

Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word ×8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provi

文件：281.06 Kbytes 页数：14 Pages

SANYO

三洋

1MEG (131072 words x 8 bits) Flash Memory

Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word ×8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provi

文件：281.06 Kbytes 页数：14 Pages

SANYO

三洋

1MEG (131072 words x 8 bits) Flash Memory

Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word ×8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provi

文件：281.06 Kbytes 页数：14 Pages

SANYO

三洋

1MEG (131072 words ×8 bits) Flash Memory

Overview\nThe LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word ×8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provides • Highly reliable 2-layer polysilicon CMOS flash EEPROM process\n• Fast access time: 90, 120, and 150 ns\n• Highly reliable read/write\n• Address and data latches\n• Automatic rewriting using internally generated Vpp\n• Hardware and software data protection functions\n• Pin assignment conforms to th;

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