GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Wide beam • Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc. with DIN 40 040 GQG Applications • Photointerrupters • Sensor tech

文件：209.24 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● Wide beam ● Same package as BP 103, BPX 63, SFH 464, SFH 483 ● DIN humidity category in acc. with DIN 40 040 GQG Applications ● IR r

文件：39.85 Kbytes 页数：5 Pages

SIEMENS

西门子

GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● Wide beam ● Same package as BP 103, BPX 63, SFH 464, SFH 483 ● DIN humidity category in acc. with DIN 40 040 GQG Applications ● IR r

文件：39.85 Kbytes 页数：5 Pages

SIEMENS

西门子

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Wide beam • Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc. with DIN 40 040 GQG Applications • Photointerrupters • Sensor tech

文件：209.24 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Wide beam • Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc. with DIN 40 040 GQG Applications • Photointerrupters • Sensor tech

文件：209.24 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● Wide beam ● Same package as BP 103, BPX 63, SFH 464, SFH 483 ● DIN humidity category in acc. with DIN 40 040 GQG Applications ● IR r

文件：39.85 Kbytes 页数：5 Pages

SIEMENS

西门子

GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● Wide beam ● Same package as BP 103, BPX 63, SFH 464, SFH 483 ● DIN humidity category in acc. with DIN 40 040 GQG Applications ● IR r

文件：39.85 Kbytes 页数：5 Pages

SIEMENS

西门子

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Wide beam • Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc. with DIN 40 040 GQG Applications • Photointerrupters • Sensor tech

文件：209.24 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

25A 10mm LUCAS TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 20µA

文件：24.53 Kbytes 页数：2 Pages

WTE

Won-Top Electronics

25A GLASS PASSIVATED LUCAS TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

文件：40.66 Kbytes 页数：2 Pages

WTE

Won-Top Electronics