256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

文件：128.5 Kbytes 页数：9 Pages

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

文件：128.5 Kbytes 页数：9 Pages

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

文件：128.5 Kbytes 页数：9 Pages

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use w

文件：128.5 Kbytes 页数：9 Pages

SANYO

三洋

256 K (32768 words X 8 bits) Pseudo-SRAM

ONSEMI

安森美半导体

256 K (32768 words × 8 bits) Pseudo-SRAM

Overview\nThe LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use with • 32768 words × 8 bits configuration\n• Single 5 V ±10% power supply\n• All input and output (I/O) TTL compatible\n• Fast access times and low power dissipation\n• 4 ms refresh using 256 refresh cycle\n• CE-only refresh, auto-refresh, and self-refresh\n• Low-power version: 100 µA self-refresh cu;

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安森美半导体