LTE SoC智能手机芯片

联芯科技LTE Soc智能手机芯片LC1860，采用28nm制程工艺，完整覆盖TD-LTE/LTE FDD/TD-SCDMA/WCDMA/GGE五种模式，支持全球漫游，最高下行速度可实现150Mbps，其LTE制式与多模能力将充分满足移动互联时代移动终端大数据实时传输的需求。1860具备领先的LTE Soc芯片架构设计，集成AP与Modem，能大幅提升芯片集成度并降低功耗及成本，有效解决4G时代移动智能终端设计的关键环节。 28nm工艺\r\n六核Cortex A7 2GHz\r\n双核MaliT628,1380MPix/s，173MTri/s,支持openGL ES3.0,openCL1.1\r\n支持LPDDR3\r\n支持2K LCD Display\r\n2000万像素摄像能力，支持720P@120帧拍摄\r\n1080P@60P 编解码，支持H.265\r\n支持Trustzone和安全OS\r\n低功耗设计\r\n支持Android4.4\r\n支持TD-LTE/LTE FDD/TD-SCDMA/WCDMA/GGE五模\r\n支持LTE Category 4, U/L: 50Mbps/150Mbps\;

Leadcore

联芯威电子

LMX1860-SEP Low-Noise, High-Frequency JESD204B/C Buffer, Multiplier and Divider

1 Features • VID #V62/24630 – Total ionizing dose 30krad (ELDRS-free) – Single event latch-up (SEL) immune up to 43MeV - cm2 /mg – Single event functional interrupt (SEFI) immune up to 43MeV - cm2 /mg • Clock buffer for 300MHz to 15GHz frequency • Ultra-Low Noise – Noise floor of –159dBc/

文件：2.98315 Mbytes 页数：64 Pages

TI

德州仪器

LMX1860-SEP Low-Noise, High-Frequency JESD204B/C Buffer, Multiplier and Divider

1 Features • VID #V62/24630 – Total ionizing dose 30krad (ELDRS-free) – Single event latch-up (SEL) immune up to 43MeV - cm2 /mg – Single event functional interrupt (SEFI) immune up to 43MeV - cm2 /mg • Clock buffer for 300MHz to 15GHz frequency • Ultra-Low Noise – Noise floor of –159dBc/

文件：2.98315 Mbytes 页数：64 Pages

TI

德州仪器

LMX1860-SEP Low-Noise, High-Frequency JESD204B/C Buffer, Multiplier and Divider

1 Features • VID #V62/24630 – Total ionizing dose 30krad (ELDRS-free) – Single event latch-up (SEL) immune up to 43MeV - cm2 /mg – Single event functional interrupt (SEFI) immune up to 43MeV - cm2 /mg • Clock buffer for 300MHz to 15GHz frequency • Ultra-Low Noise – Noise floor of –159dBc/

文件：2.98315 Mbytes 页数：64 Pages

TI

德州仪器