9935

RS232/423LowCap,#24-10c,FPE,O/AFoilBraid,PVCJkt,CM

ProductDescription ComputerEIARS-232/423Cable,24AWGstranded(7x32)tinnedcopperconductors,Datalene®insulation,overallBeldfoil®(100coverage)+tinned copperbraidshield(65coverage),drainwire,PVCjacket.

APM9935

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

APM9935K

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

APM9935KC-TR

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

APM9935KC-TRL

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

APM9935KC-TU

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

APM9935KC-TUL

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

CEM9935

DualN-ChannelEnhancementModeFieldEffectTransistor

CEM9935A

DualN-ChannelEnhancementModeFieldEffectTransistor

CEM9935A

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,6.0A,RDS(ON)=36mW@VGS=10V. RDS(ON)=42mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RDS(ON)=75mW@VGS=2.5V. Leadfreeproductisacquired.