LMG2650

LMG2650650V95mΩGaNHalfBridgewithIntegratedDriverandCurrentSenseEmulation

1Features •650VGaNpower-FEThalfbridge •95mΩlow-sideandhigh-sideGaNFETs •Integratedgatedriverswith

MAX2650

DC-to-Microwave,5VLow-NoiseAmplifier

GeneralDescription TheMAX2650isalow-noiseamplifierforusefromDCtomicrowavefrequencies.Operatingfromasingle+5Vsupply,ithasaflatgainresponseto900MHz.TheMAX2650’slownoisefigureandhighdrivecapabilitymakeitidealforavarietyoftransmit,receive,andbufferappli

MAX2650

DC-to-Microwave,5VLow-NoiseAmplifier

Features •InternallyBiased •HighGain:18.3dBat900MHz •3.9dBNoiseFigure •Single+4.5Vto+5.5VOperation •-1dBmOutput1dBCompressionPower •Low-CostSiliconBipolarDesign •Ultra-SmallSOT143Package Applications •WirelessLocalLoop •GlobalPositioningSystems(GPS) •ISMRadios

MAX2650EUS-T

DC-to-Microwave,5VLow-NoiseAmplifier

Features •InternallyBiased •HighGain:18.3dBat900MHz •3.9dBNoiseFigure •Single+4.5Vto+5.5VOperation •-1dBmOutput1dBCompressionPower •Low-CostSiliconBipolarDesign •Ultra-SmallSOT143Package Applications •WirelessLocalLoop •GlobalPositioningSystems(GPS) •ISMRadios

MAX2650EUS-T

DC-to-Microwave,5VLow-NoiseAmplifier

GeneralDescription TheMAX2650isalow-noiseamplifierforusefromDCtomicrowavefrequencies.Operatingfromasingle+5Vsupply,ithasaflatgainresponseto900MHz.TheMAX2650’slownoisefigureandhighdrivecapabilitymakeitidealforavarietyoftransmit,receive,andbufferappli

NITB-2650

High-DensityMulticonfigurationMatrixSwitchModules

NJM2650

DualHallAmplifierICforConvertingSignals

NTE2650

NTE2649(NPN)&NTE2650(PNP)SiliconComplementaryTransistorsDarlington

NTE2649(NPN) NTE2650(PNP) AbsoluteMaximumRatings:(TA=+25°Cunlessotherwisespecified) Collector−BaseVoltage,VCBO........................................200V Collector−EmitterVoltage,VCEO......................

OPA2650

Dual,700MHz,Voltage-FeedbackOPERATIONALAMPLIFIER

OPA2650

DualWideband,LowPowerVoltageFeedbackOPERATIONALAMPLIFIER