L6560D中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. Realized in mixed BCD technology, the chip integrates:

- An undervoltage lockout with micropower start up and hysteresis.

- An internal temperature compensated precise band gap reference.

- A stable error amplifier.

- One quadrant multiplier.

- Current sense comparator.

- An output overvoltage protection circuit.

- A totem-pole output stage able to drive a POWER MOS or IGBT devices with source and sink current of 400mA. The chip works in transition mode and is particularly intended for lamp ballast applications and for low power SMPS.

VERY PRECISE ADJUSTABLE INTERNAL OUTPUT OVERVOLTAGE PROTECTION

HYSTERETIC START-UP (ISTART-UP < 0.5mA)

VERY LOW QUIESCENT CURRENT (< 3.5mA)

INTERNAL START-UP TIMER

TRANSITION MODE OPERATING

TOTEM POLE OUTPUT CURRENT: ±400mA

DIP8/SO8 PACKAGES