Features

 High voltage rail up to 600 V

 dV/dt immunity ± 50 V/ns over full temperature

range

 Driver current capability:

– 290 mA source

– 430 mA sink

 Switching times 75/35 ns rise/fall with 1 nF load

 3.3 V, 5 V TTL/CMOS inputs with hysteresis

 Integrated bootstrap diode

 Internal 320 ns deadtime

 Interlocking function

 Compact and simplified layout

 Bill of material reduction

 Flexible, easy and fast design

Description

The L6399 is a high voltage device manufactured

using BCD™ “offline” technology. It is a singlechip

half bridge gate driver for N-channel power

MOSFETs or IGBTs.

The high-side (floating) section is designed to

withstand a voltage rail up to 600 V. The logic

inputs are CMOS/TTL compatible down to 3.3 V

for easy microcontroller/DSP interfacing.

Applications

 Home appliances

 Industrial applications and drives

 Motor drivers DC, AC, PMDC and PMAC

motors systems

 HVAC

 Factory automation

 Power supply systems

 Compressors

 Fans

 Lighting applications

L6399DTR属于集成电路（IC） > 栅极驱动器。意法半导体（ST）集团制造生产的L6399DTR栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。