L6389ED技术资料参数批发供应意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
L6389ED	文件：437.45 Kbytes Page：19 Pages	High voltage high and low-side driver Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 70/40 nsec rise/fall with 1 nF load  3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down  文件：437.45 Kbytes 页数：19 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6389EDTR	文件：437.45 Kbytes Page：19 Pages	High voltage high and low-side driver Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 70/40 nsec rise/fall with 1 nF load  3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down  文件：437.45 Kbytes 页数：19 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6389ED	文件：100 bytes Page：1 Pages	Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件类别：集成电路（IC）栅极驱动器描述：IC GATE DRVR HALF-BRIDGE HI/LO	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6389EDTR	文件：100 bytes Page：1 Pages	Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件类别：集成电路（IC）栅极驱动器描述：IC GATE DRVR HALF-BRIDGE HI/LO	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多L6389ED供应商更新时间2026-3-9 16:12:00