100 V DMOS SWITCHES

DESCRIPTION Realized with the Multipower-BCD mixed bipolar/CMOS/DMOS process, the L6122/23monolithic three DMOS switch is designed for high current, high voltage switching applications. Each of the three switches is controlled by a logic input and all three are controlled by a common enable input

文件：182.9 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). • High allowable power dissipati

文件：236.36 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation Applications • DC-DC converter, relay d

文件：510.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation Applications • DC-DC converter, relay d

文件：510.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体