Common Cathode Fast Recovery Epitaxial Diode (FRED)

Features ● International standard package JEDEC TO-247 AD ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behavior ● Epoxy meets UL 94V-0 ● Version AR isolated and UL registered E153432 Applications ● Rectifiers in sw

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IXYS

艾赛斯

Common Cathode Fast Recovery Epitaxial Diode (FRED)

Littelfuse

力特

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

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NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.64 Kbytes 页数：5 Pages

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.64 Kbytes 页数：5 Pages

POINN