L1N60Z

N-Channel Power MOSFET

MDZ1N60UMH

N-ChannelMOSFET600V,0.4A

MIP1N60

N-Channel650V(D-S)MOSFET

MIP1N60E

N-Channel650V(D-S)MOSFET

MO1N60

N-Channel650V(D-S)MOSFET

MSU1N60

600VN-ChannelMOSFET

MTA1N60E

FULLYISOLATEDTMOSE-FETPOWERFIELDEFFECTTRANSISTOR

MTD1N60E

TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM

TMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE

MTD1N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

MTP1N60

PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif