-20V -3.5A P-MOS

►Low RDS(on) @VGS=-4.5V\n►-3.3V Logic Level Control\n►P Channel SOT23-3L Package\n►Pb−Free, RoHS Compliant;

KXDZ

可芯电子

-20V -2.8A P-MOS

The KX2301SA uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. ►Battery protection \n►Load switch\n►Uninterruptible power supply;

KXDZ

可芯电子

SILICON GATE ENHANCEMENT MODE

文件：87.51 Kbytes 页数：2 Pages

Polyfet

LCE P-Channel Enhancement Mode Power MOSFET

文件：2.02271 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

LCE P-Channel Enhancement Mode Power MOSFET

文件：1.27168 Mbytes 页数：3 Pages

LEIDITECH

雷卯电子