KV2101数据手册分立半导体产品的二极管-可变电容（变容器可变电抗器）规格书PDF

描述 Description

These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 pF at 3 or 4 volts of bias, depending on product series. They allow octave tuning of LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio, straight-line-frequency tuning over a 3 to 8 volt tuning range is possible. Ultrahigh Q and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias. Linear, wide deviation tuning of VCXO/TCXO's and frequency modulators also results when these diodes are tuned over a 3 to 8 volt bias range.

简介

KV2101属于分立半导体产品的二极管-可变电容（变容器可变电抗器）。由制造生产的KV2101二极管 - 可变电容（变容器，可变电抗器）可变电容二极管可按照电子可变电容器用途进行生产和分类，并且广泛用于调谐和频率合成应用。虽然大多数二极管的结电容都随着所施加的反向偏压增加而减小，并且能够用作可变电容二极管，但专门作为此类器件销售的产品在生产和分类时特别考虑了这种用途。