KV2101分立半导体产品的二极管-可变电容（变容器可变电抗器）规格书PDF中文资料

DESCRIPTION

These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 pF at 3 or 4 volts of bias, depending on product series. They allow octave tuning of LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio, straight-line-frequency tuning over a 3 to 8 volt tuning range is possible. Ultrahigh Q and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias. Linear, wide deviation tuning of VCXO/TCXO’S and frequency modulators also results when these diodes are tuned over a 3 to 8 volt bias range.

Closely matched sets of all HF-VHF diodes are available along with “A” suffix versions having ±5 capacitance tolerance at 3 or 4 volts of reverse bias depending on series selected.

KEY FEATURES

▪ Available as packaged devices or as chips for hybrid applications

▪ Octave Tuning Range

▪ Ultrahigh Q

▪ Available with 5 Tolerance CT

APPLICATIONS/BENEFITS

▪ Values cover the entire HF / VHV / UHF spectrum;

▪ Highest Q / lowest VCO phase noise

▪ Tough MIL-Spec SiO2 passivation

▪ Dozens of package outlines available

APPLICATIONS

These families of hyperabrupt varactors are ideal for wide bandwidth VCOs. They also provide excellent performance in frequency modulators, voltage variable filters, analog phase shifters, TCXOs and VCXOs.