首页 >KUWTN-2333SLASHQ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NCEP-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
P-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
LowPower,Zero-DriftOperationalAmplifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
OperationalAmplifier,Zero-Drift,10VOffset,0.07V/C TheNCS333/2333/4333familyofzero−driftopampsfeatureoffset voltageaslowas10Voverthe1.8Vto5.5Vsupplyvoltagerange. Thezero−driftarchitecturereducestheoffsetdrifttoaslowas 0.07V/°Candenableshighprecisionmeasurementsoverbothtime andtemperature.Thisfamil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LowPower,Zero-DriftOperationalAmplifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Zero-DriftOperationalAmplifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LowPower,Zero-DriftOperationalAmplifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
OperationalAmplifier,Zero-Drift,10VOffset,0.07V/C TheNCS333/2333/4333familyofzero−driftopampsfeatureoffset voltageaslowas10Voverthe1.8Vto5.5Vsupplyvoltagerange. Thezero−driftarchitecturereducestheoffsetdrifttoaslowas 0.07V/°Candenableshighprecisionmeasurementsoverbothtime andtemperature.Thisfamil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconNPNPowerTransistorforSwitchingPowerApplications Description: TheNTE2333isasiliconNPNPowerTransistorinaTO220packagedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts. Features: •ImprovedEfficiencyDuetoLowBaseDriveRequirements: HighandFlatDCCurrentGainhFE | NTE NTE Electronics | NTE | ||
0.03-uV/CDrift,Low-Noise,Rail-to-RailOutput,36-V,Zero-DriftOPERATIONALAMPLIFIERS | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 |
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