KUK7607-55B

TrenchMOSTM standard level FET

BUK7607-55B

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

BUK7607-55B

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

BUK7607-55B

TrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7507-55BinSOT78(TO-220AB) BUK7607-55BinSOT404(D2-PAK). Features ■Verylow

PHI

KUMP-14D18-12

TE
SMD