TrenchMOSTM standard level FET

文件：56.52 Kbytes 页数：2 Pages

KEXIN

科信电子

TrenchMOSTM standard level FET

文件：56.78 Kbytes 页数：2 Pages

KEXIN

科信电子

TrenchMOS횚 transistor Standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general

文件：72.89 Kbytes 页数：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

文件：305.34 Kbytes 页数：2 Pages

ISC

无锡固电